大家都搜：
复合速度
1、cratering velocity───弹坑速度
2、angular velocity───[力]角速度
3、homologous recombination───[遗]同源重组
4、velocity profile───速度剖面（图），速度分布图，速度变化图
5、velocity───n.【物】速度
6、auger recombination───俄歇复合；奥杰复合
7、constant velocity───常速度，等速度; 恒速；匀速；等速度；恒速度
8、muzzle velocity───初速；出口速度；初速度（弹出膛时的速度）
9、velocity magnitude───速度大小
1、This paper presents a new solution of minority carrier continuity equation for a wafer with different surface recombination velocity on its two surfaces.───本文给出了有相异表面复合速度时半导体薄片少子连续方程的一种新解法。
2、Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.───可以使用这些结果讨论一些薄片的少子寿命和表面复合速度。
3、When the surface hole recombination velocity and defect density is bigger, the length of nanowire should not be too long.───当表面复合速率和体缺陷密度较大时，纳米柱的长度不宜过大。
4、Acquisition of Low Surface Recombination Velocity on Surface of p-type Si───p-Si单晶低表面复合速度的获得
1、A theoretical analysis is given of the effects of surface recombination velocity and of varying absorption depth of the light in specimen.
2、So the back surface recombination velocity Sb begins to strongly influence solar cell performance when the ratio of minority carrier diffusion length to device thickness approached or exceeds unity.
3、This paper presents a new solution of minority carrier continuity equation for a wafer with different surface recombination velocity on its two surfaces.
4、Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.
5、When the surface hole recombination velocity and defect density is bigger, the length of nanowire should not be too long.
6、Simultaneously, defects in the passivation layer of the device surface are also increased with the increasing of the baking temperature and also the surface recombination velocity.
7、An extensive study has been carried out on the effect of thermal annealing on carrier lifetime and surface recombination velocity, which affect the final output of the solar cell.
8、The screen-printed Al-back surface field (Al-BSF) is widely used now to reduce the back surface recombination velocity ( Sb) and improve the efficiency of silicon solar cells.