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[电子]氧化物半导体
1、oxide───n.[化学]氧化物
2、national semiconductor───美国国家半导体公司
3、semiconductor device───半导体器件，半导体装置；[电子]半导体器件；半导体装置；半导体掐
4、arsenious oxide───[医] 氧化亚砷
5、antimony oxide───[无化]氧化锑；五氧化二锑；锑白，氧化锑
6、oxide layer───氧化层
7、semiconductor diode───[电子]半导体二极管
8、cypress semiconductor───赛普拉斯半导体
9、zinc oxide───n.[无化]氧化锌；n.氧化锌
1、A method of manufacturing a metal oxide semiconductor (500).───一种制造金属氧化物半导体的方法(500)。
2、A gate structure of the metal oxide semiconductor is etched (510).───金属氧化物半导体的栅极构造蚀刻(510)。
3、The oxygen - sensitive characters of metal - oxide semiconductor oxygensensor is re - ported.───研究了一种氧化物半导体型氧敏元件的氧敏特性。
4、The invention relates to a manufacture method of a trench type metal-oxide semiconductor device.───一种沟道式金属氧化物半导体元件的制作方法，其特征在于包括：提供一基板；
5、depositing an oxide semiconductor film on the top face of the microcrystalline glass base sheet by sol-gel method.───在微晶玻璃基片的顶面上用溶胶凝胶法沉积氧化物半导体薄膜。
6、The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.───在金属氧化物半导体场效应晶体管 (M O S F E T)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
7、The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer.───本发明提供了一种其中铝原子不可能扩散到氧化物半导体层的薄膜晶体管。
8、Phthalocyanine and oxide semiconductor sensitive materials used for NO2 sensors in recent ten year are described.───描述了近十年来用作NO2气体传感器的酞菁类和氧化物半导体敏感材料。
9、Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.───本发明提供了一种互补金属氧化物半导体 (C M O S)装置及其制造方法。
1、The invention disclosed a metal oxide semiconductor element with voltage stabilization and electrostatic discharge protection and a manufacturing method thereof, which is applied to a chip.
2、Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.
3、VMOS? Vertical Metal Oxide Semiconductor?
4、High mobility P-channel power metal oxide semiconductor field effect transistors.
5、A complementary metal oxide semiconductor(CMOS) readout integrated circuit(ROIC) for the sensitive material of vanadium dioxide(VO_2) was introduced.
6、A method of manufacturing a metal oxide semiconductor (500).
7、The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
8、Metal Oxide Semiconductor Field Effect TransistorsThe BJT and JFET have a diode in their input circuit which controls their mode of operation.
9、Therefore, the metal oxide semiconductor can be used efficiently without additional manufacturing of a capacitor, and can save the chip size so as to reduce the cost.