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[计]存储单元（元件）
1、fat cells───[医] 脂肪细胞；脂肪细胞（fatcell的复数）
2、endothelial cells───内皮细胞
3、culturable cells───可培养细胞
4、stem cells───干细胞（stemcell的复数）
5、memory───n.记忆，记忆力；内存，[计]存储器；回忆；n.(Memory)人名；(英)梅默里
6、brood cells───[植]芽胞；母细胞
7、cells───v.住在牢房中（cell的三单形式）；n.[细胞]细胞；单元格（cell的复数）；牢房；小屋
8、hypoblast cells───下胚层细胞
9、format cells───[计] 设置单元格式；设置单元格格式
1、There is much pain accumulated in your body cells, in your dormant memory cells.───有许多累积在你们身体细胞中的痛苦，在你们休眠的记忆细胞里。
2、A bit line on the insulating layer is electrically connected to a last one of the plurality of resistive memory cells.───位于绝缘层上的位线电连接到多个电阻存储器单元中的最后一个。
3、As I was browsing through an old newspaper, I read aloud to my wife a news item about men losing their memory cells faster than women do.───我翻阅着一份旧报纸，大声地给妻子读一则消息，上面说男人的记忆细胞比女人的失去得快。
4、The Ge-nanocrystals flash-memory cells with trench structure could be a promising candidate in future flash memory application.───希冀以此具有沟槽结构的锗奈米晶体快闪记忆体单胞元可应用在未来的记体体工业中。
5、Physical addresses are used to address memory cells in memory chips.───物理DiZhi是用来真正访问内存单元的DiZhi。
6、Memory cells generated by the HIV vaccine are activated when they learn HIV is present from the front line troops .───AiZi病毒产生的记忆细胞一旦他们学会了，就会被激活。
7、Years of deep and shallow, that the traces of memory cells that can not be fixed, but also how to choose.───那些岁月中深深浅浅的痕迹，那些无法定格的记忆，又要如何取舍。
8、Another embodiment includes applying a lower program voltage to program memory cells of the last word line to select physical states.───另一实施例包括施加较低的编程电压，以将所述最末字线的存储器单元编程为选择物理状态。
9、An integrated circuit includes an array of memory cells and a doped semiconductor line formed in a semiconductor substrate.───一种集成电路，包括存储单元阵列和形成在半导体基板中的掺杂半导体线。
1、Recordings are stored in on - chip nonvolatile memory cells, providing zero - power message storage.
2、A sense amplifier circuit for reading the state of memory cells.
3、Unused memory cells following the BELL & RET command are considered free.
4、In a memory cell array, a plurality of memory cells having ferroelectric capacitors amplifies the potential of the bit lines of each memory cell.
5、Some fraction of memory cells or transistors in a vertical microcircuit will happen to straddle a boundary between polysilicon grains and will possibly fail as a result.
6、Through restructuring and reengineering, business memory cells are dispersing.
7、At least one of the plurality of resistive memory cells may include a switching device and a data storage element including a variable resistor connected in parallel with the switching device.
8、Acquired immunity relies on the long-term survival of sensitized T and B memory cells, which can proliferate quickly upon reinfection by the same pathogen.
9、In addition, a DVS technology is used reducing the leakage power in the TLB's memory cells by 90%.