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p型
1、p for p───p对p
2、p p s───abbr.聚苯硫（polyphenylenesulfite）；每秒脉冲数（pulsespersecond）；（拉）再附言（postpostscriptum）；一种网络在线电视软件 (P P Stream)
3、Batt Type───电池类型
4、dimm type───雾型
5、p p───abbr.过去分词(pastparticiple)
6、jesting type───玩笑式
7、type in───打入，输入；在已打好的材料上加入; 输入（在网上）
8、type───vi.打字；vt.打字；测定（血等）类型；n.类型，品种；模范；样式；n.(Type)人名；(英)泰普
9、script type───脚本类型
1、rich in mitochondria, P type plastids, and some SEs had nacreous wall.───丰富的线粒体、P 型质体，有些筛分子有珠光壁。
2、However, transistors come in two varieties, n-type (negative) and p-type (positive).───不过，晶体管却有两种，一种是N型（负），一种是P型（正）。
3、In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.───在p型和n型半导体材料之间渡越区中的一个面，在这里施主杂质和受主杂质的浓度相等。
4、and the intrinsic semiconductor is configured between the P-type semiconductor and the N-type semiconductor.───所述本征半导体配置于所述P型半导体与所述N型半导体之间。
5、He found that producing p-type gallium nitride, which made use of ammonia at high temperatures, trapped hydrogen atoms inside the crystal.───他发现在生成p型氮化镓的时候需要利用高温氨，以致于把氢原子引入了晶体之中。
6、In electronics, an interface between a P -type and N-type semiconductor material ; such an interface produces a diode effect.───在电子技术中，一种p型和N型半导体材料之间的界面，这种界面可以产生二极管效应。
7、In this case, as the P-type and N-type materials, any material generally preferably used for thermoelectric pairs can be used.───在这种情况下，作为P型和N型材料，可以使用通常优选地用于热电偶的任何材料。
8、s Isamu Akasaki and his colleagues at Nagoya University created the first p-type gallium nitride by incorporating tiny amounts of magnesium.───年代后叶akasaki和他的同事们在名古屋大学通过添加少许镁制造出首例p型氮化镓。
9、The on-resistance is decreased as a result of increasing drift region doping which is due to the neutralism of the p-type buried layer.───p型埋层的电中性作用增加了漂移区优化的浓度而使比导通电阻降低。
1、Based on extension set, a concept of P type extension relationship equation constructed by extension matrix and the equation solution existence theorems are presented.
2、A novel high power microwave detector was described in this paper, which was developed based on hot carriers effect in P type semiconductors for measuring the power of high power microwave(HPM).
3、Accordingly, the I-V characteristics of N and P type DBRs due to three kinds of current mechanisms:the drift-diffusion, pure drift and thermionic emission currents, have been analyzed theoretically.
4、Dietl et al. predicted that p type Mn doped ZnO could have ferromagnetism at room temperature.