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栅电压，触发电压
1、voltage measurement───[电]电压测量
2、voltage source───n.电压电源
3、voltage rating───[电]额定电压
4、gate───vt.给…装大门；n.(Gate)人名；(英)盖特；(法、瑞典)加特；n.大门；出入口；门道
5、voltage difference───[电]电压差
6、voltage limit───电压极限
7、doubler voltage───倍增电压
8、voltage regulation───稳压；[电]电压调整；[电]电压变动率；电压变动率，电压调整，稳压
9、input voltage───[电]输入电压；工作电压
1、Luminescence intensity increased, but the role of the gate voltage to control current is not ideal.───器件的发光强度有所提高，但栅压对载流子的控制作用不理想。
2、The emission current density at the apex was found to be the highest, depending exponentially on the gate voltage.───电流密度在纳米线顶端边缘处最大，而且随着栅极电压的增加而呈指数增加。
3、Fig. 13 shows that a change of the gate voltage from 10V to 15V hardly influences the spectrum.───图13展示出栅源极电压从10伏特到15伏特变化几乎不对干扰频谱产生影响。
4、Luminescence intensity increased, but the role of the gate voltage to control current is not ideal.───的发光强度有所提高，但栅压对载流子的控制作用不理想。
5、The appropriate spectrum for 6 A peak drain-current, 13 V gate voltage and 380 V drain-source voltage has been chosen as reference.───为在峰值6安培漏极电流下获得适当的频谱，选择13伏特的栅源极电压和380伏特的漏源极电压为参考。
6、The applied gate voltage gives rise to negative differential resistance (NDR).───通过直流栅电压的作用室温时产生负电阻效应。
7、Erasing the memory devices can include applying a gate voltage to the wordlines and applying a bias voltage to the dummy wordlines.───存储装置的擦除可包含：施加栅极电压至字线且施加偏压至虚拟字线。
8、Slowly-drop gate voltage and softly turn-off principles are explained in this article, specific parameters are also listed.───阐述了软降栅压和软关断的过电流保护原理，列出具体的保护时序参数。
9、high precision resistor is composed of three NMOS FETs with controllable gate voltage and aspect ratios.───控制各MOS 管的栅电压和宽长比可得到线形度较好的高精度电阻器。
1、The acoustoelectric current also reveals Coulomb Blockade as a function of split gate voltage when microwave signal with the resonance frequency is coupled to DDT.
2、The gate voltage, at which the barrier height has its maximum, just corresponds to the threshold voltage of a MOS structure with zero electro-de gap.
3、It is showed that the varying gate voltage will change the nonlinear transconductance to get mixer function.
4、Slowly-drop gate voltage and softly turn-off principles are explained in this article, specific parameters are also listed.